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Nanomechanical Proximity Perturbation for Switching in Silicon-Based Directional Couplers for High-Density Photonic Integrated Circuits

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2 Author(s)
Rohit Chatterjee ; Optical Nanostructures Laboratory, Center for Integrated Science and Engineering, Solid-State Science and Engineering, and Mechanical Engineering, Columbia University, New York, NY, USA ; Chee Wei Wong

We describe and demonstrate nanomechanical near-field proximity perturbation for tuning the effective refractive index of silicon-based high-density photonic integrated circuits. The proximity perturbation technique causes an antisymmetric refractive index change in a directional-coupler implementation, enabling switching action from the cross to the bar state. An almost 8-dB extinction ratio with ~14 ?? ??s switching speeds is experimentally achieved using this technique with our single-mode waveguides of 500 nm ?? 200 nm cross section coupled to a movable 100-nm perturbing dielectric. A practical single-level switch with ring resonators fabricated by CMOS-compatible methods is also demonstrated.

Published in:

Journal of Microelectromechanical Systems  (Volume:19 ,  Issue: 3 )