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Room temperature photonic crystal band-edge lasing from nanopillar array on GaN patterned by nanosphere lithography

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3 Author(s)
Fu, Wai Yuen ; Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong ; Wong, Kenneth Kin-Yip ; Choi, H.W.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3353974 

An ordered GaN nanopillar array fabricated by nanosphere lithography exhibited room temperature photopumped lasing via the photonic crystal band-edge effect. With a monolayer of self-assembled nanospheres as hard mask, the ordered pattern was transferred to the sample to form nanopillars by inductively coupled plasma dry etch. Under pulsed optical excitation, room temperature lasing with a low lasing threshold of 30 mJ/cm2 was achieved. The dominant lasing peak, centered at 415.6 nm, corresponds to a band-edge mode at the Γ-point of the band diagram. A Q factor in the range of 600–700, and spontaneous emission coupling factor of 0.021 were evaluated.

Published in:

Journal of Applied Physics  (Volume:107 ,  Issue: 6 )

Date of Publication:

Mar 2010

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