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Heterojunction Bipolar Photo-Transistors for High Speed Logic and Communication Applications

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2 Author(s)
Doherty, A.J. ; Joint Laboratory of Physics and Electrical Engineering, Department of Electrical Engineering and Electronics, University of Manchester Institute of Science and Technology, P O Box 88, Manchester M60 1QD, U K ; Truscott, W.S.

We report the results of an experimental study on a GaAs/AlGaAs double heterojunction bipolar transistor structure which can be integrated with fast optical detectors. Results are presented showing that the structure can be fabricated into transistors with fts over 100 GHz, and that the photodetecting structure has a good sensitivity with an incident wavelength of 830 nm.

Published in:
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European

Date of Conference: 14-17 Sept. 1987

Page(s):
887 - 890
Print ISBN:
0444704779
Conference Location :
Bologna, Italy
Product Type:
Conference Publications

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