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Reliable, High Temperature Stable Schottk Contacts to GaAs Based on LaB6 Diffusion Barriers

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3 Author(s)
Wurfl, J. ; TH Darmstadt, Institut für Hochfrequenztechnik, Merckstr. 25, 6100 Darmstadt, FR Germany ; Singh, J.K. ; Hartnagel, H.L.

The thermal stability of Au-LaB6 Schottky-diodes on n-GaAs has been investigated using I/V-measurements and XPS-analysis. The e-beam evaporated contact systems exhibit good electrical properties. It could be shown that the ideality factor and the barrier height improves after a certain annealing step and remains almost stable even after prolonged operation at 400°C. This demonstrates the suitability of lanthanum hexaboride to be used as a high temperature stable diffusion barrier in Au-LaB6 Schottky contacts to GaAs.

Published in:
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European

Date of Conference: 11-14 Sept. 1989

Page(s):
165 - 168
Print ISBN:
0387510001
Conference Location :
Berlin, Germany

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