By Topic

Investigation of GaAs/AIGaAs Quantum Well Lasers by Micro Raman Spectroscopy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Beeck, S. ; Walter Schottky Institut, TUM, D-8046 Garching, FRG ; Egeler, T. ; Abstreiter, G. ; Brugger, H.
more authors

GaAs/AlGaAs quantum well lasers are investigated with non destructive micro Raman spectroscopy. Electronic properties and temperature behaviour at the mirror surfaces were studied by probe lasers with high spatial resolution. Electric field induced Raman scattering (EFIRS) is suitable for observing the band bending, caused by surface states. Temperature behaviour of coated and uncoated mirrors and the spatial temperature profile are investigated by measuring the Stokes- and anti-Stokes intensities of the GaAs TO-phonon. Resonant electronic Raman scattering leads to spatial distribution of carrier densities.

Published in:

Solid State Device Research Conference, 1989. ESSDERC '89. 19th European

Date of Conference:

11-14 Sept. 1989