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High-frequency properties and application of invertible GaInAsP/InP double-heterostructure bipolar transistors

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6 Author(s)
Paraskevopoulos, A. ; Heinrich-Hertz-Institut f?r Nachrichtentechnik ik Berlin GmbH, Einsteinufer 37, D-1000 Berlin 10, F.R.G. ; Bach, H.-G. ; Schroeter-JanBen, H. ; Mekonnen, G.
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In this paper we report on invertible DHBTs fabricated on GaInAsP/InP. Localized Zn diffusion allowed for practically equal active transistor areas in the forward and inverse mode. Transit frequencies up to 6 GHz with collector currents over 100mA could be demonstrated on these devices. As an application, three transistors were monolithically integrated to form a laser driver circuit showing modulation rates up to 2.6 Gbit/s.

Published in:

Solid State Device Research Conference, 1990. ESSDERC '90. 20th European

Date of Conference:

10-13 Sept. 1990