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Nonstationary Electron Transport in Realistic Submicron BP-SAINT GaAs MESFETs Evaluated by Ensemble Monte Carlo Simulation

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1 Author(s)
Yamada, Y. ; Department of Electrical Engineering and Computer Science, Kumamoto University, Kurokami 2-39-1, Kumamoto City 860, JAPAN

The nonstationary electron transport in the realistic nonuniformly-doped BPSAINT GaAs MESFETs with 0.1 to 0.53¿m gate-lengths has been studied under the various conditions using an ensemble Monte Carlo simulator. It is found that the effective saturation velocity depends on the gate-length, but also on the drain voltage, the gate voltage, and the doping density. The some assumptions used in the relaxation time approximation are discussed.

Published in:

Solid State Device Research Conference, 1991. ESSDERC '91. 21st European

Date of Conference:

16-19 Sept. 1991