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Analysis of the Early-Failure Rate Prediction of Time-Dependent-Dielectric Breakdown in Thin Oxides

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5 Author(s)
J. L. Ogier ; IMEC, Kapeldreef 75, 3001 Leuven, Belgium ; R. Degraeve ; P. Roussel ; G. Groeseneken
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The field and area dependence of the defect related TDDB breakdown mode of MOS-capacitors are investigated, in order to predict the failure rate and to determine screening conditions to guarantee a maximum failure rate during the useful life of the oxide. The application of the E and 1/E-model, together with the oxide thinning model for the defect-related breakdown are compared. A new bimodal distribution model is introduced that takes into account the interdependence of the two breakdown modes.

Published in:

Solid State Device Research Conference, 1995. ESSDERC '95. Proceedings of the 25th European

Date of Conference:

25-27 Sept. 1995