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Formation of SiGe Alloy Layers in SIMOX Substrates by Ge+ Implantation

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5 Author(s)
Chen, N.X. ; Fraunhofer-Institut fÿr Integrierte Scaltungen, Schottkystrasse 10, 91058 Erlangen, Germany; Lehrstuhl fÿr Elektronische Baelemente, Universitÿt Erlangen-Nÿrnberg, Cauerstrasse 6, 91058 Erlangen, Germany ; Gong, L. ; Schork, R. ; Yuan, J.M.
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High dose Ge+ ions were implanted into SIMOX substrates to synthesize SiGe alloys. These samples were evaluated by using RBS channeling and XTEM. The dose of implanted Get effects strongly the density of defects remaining in the surface SiGe layer. At a dose of 1.6·1016 Ge+ cm¿2, SiGe layer with a very good crystallinity could be achieved through annealing at 950°C for 1h.

Published in:

Solid State Device Research Conference, 1994. ESSDERC '94. 24th European

Date of Conference:

11-15 Sept. 1994

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