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Noise Analysis of Si-MOSFET's with Gate Oxides Deposited by Low Pressure RTCVD

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7 Author(s)
Morfouli, P. ; Laboratoire de Physique des Composants à Semiconducteurs (URA CNRS)-ENSERG, 23 rue des Martyrs, BP 257, 38016 Grenoble, FRANCE ; McLarty, P. ; Misra, V. ; Hauser, J.
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Fabrication of MOSFET's with deposited instead of thermal gate oxide could provide the ability to reduce the thennal budget of CMOS technology process. To compete with thennal oxides, deposited oxides must demonstrate that they combine a high permittivity, high reliability and a good interface quality. In this paper we compare the electrical properties of MOSFET's fabricated with thermal oxides and RTCVD deposited oxides, using low frequency noise measurements (1Hz to 5kHz). A detailed analysis of the transport measurements over a wide range of temperatures (20K - 300K) and the correlation with the noise properties are also presented.

Published in:

Solid State Device Research Conference, 1994. ESSDERC '94. 24th European

Date of Conference:

11-15 Sept. 1994

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