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Monte Carlo Simulation of Ion Implantation into Two-Dimensional Structures and its Application to the Prediction of Lateral SIMS Results

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3 Author(s)
A. Simionescu ; University of Technology Vienna, Gußhausstraße 27-29/3598, A-1040 Vienna, AUSTRIA ; G. Hobler ; R. von Criegern

The Monte Carlo simulator IMSIL [2] has been extended to take arbitrarily shaped 2-D structures into account. The lateral dose distribution at a mask edge is studied and compared with lateral SIMS measurements. The lateral dose distributions for boron and arsenic in amorphous and crystalline silicon are compared.

Published in:

ESSDERC '94: 24th European Solid State Device Research Conference

Date of Conference:

11-15 Sept. 1994