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Monte Carlo Simulation of Ion Implantation into Two-Dimensional Structures and its Application to the Prediction of Lateral SIMS Results

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3 Author(s)
Simionescu, A. ; University of Technology Vienna, Gußhausstraße 27-29/3598, A-1040 Vienna, AUSTRIA ; Hobler, G. ; von Criegern, R.

The Monte Carlo simulator IMSIL [2] has been extended to take arbitrarily shaped 2-D structures into account. The lateral dose distribution at a mask edge is studied and compared with lateral SIMS measurements. The lateral dose distributions for boron and arsenic in amorphous and crystalline silicon are compared.

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Solid State Device Research Conference, 1994. ESSDERC '94. 24th European

Date of Conference:

11-15 Sept. 1994

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