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The design of a 6 transistor SRAM cell with 0.5 μm layout rules requires an N+ to P+ spacing across the well edge in the order of 2 μm. Punchthrough and latchup sensitivity are the major factors which limit the reduction of this spacing. The process reported in this paper solves the problem of the p-type implant with its lateral diffusion at the same time the number of masking steps of the generation of the wells is reduced. Using I-line lithography with 0.5 μm resolution, SRAM cells with a spacing of 2.1 μm have been characterized and shows good isolation behaviour with low subthreshold currents.