By Topic

A New GaAlAs-GaInP-GaAs HBT Technology for Digital and Microwave Applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Launay, P. ; Lab. de Bagneux, FRANCE TELECOM-CNET-PAB, Bagneux, France ; Desrousseaux, P. ; Dangla, J. ; Fournier, V.
more authors

A new GaAlAs-GalnP-GaAs HBT technology has been developed to benefit from the GalnP-GaAs heterojunction properties and from the etching selectivity between GalnP and GaAs. The multilayer structures are grown by CBE. A 2:1 Multiplexer and a Laser Driver operating at 5.6 GBit/s and 7 GBit/s respectively have been demonstrated for the first time in this material system.

Published in:

Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European

Date of Conference:

13-16 Sept. 1993