Cart (Loading....) | Create Account
Close category search window

Weak inversion models for nMOS gate-all-around (GAA) devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Francis, P. ; Lab. de Microelectron., Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium ; Terao, A. ; Flandre, D. ; van de Wiele, F.

Several 1-D analytical models of the potential distribution across the nMOS/GAA device are proposed and compared. The most accurate result is achieved solving the Poisson equation accounting for both the depletion charges and an approximation of the electron density at the surface of the film. The derived analytical expressions of the drain current and the threshold voltage are in good agreement with numerical simulations.

Published in:

Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European

Date of Conference:

13-16 Sept. 1993

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.