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Application of 2D-Hydrodynamic Energy Modelling to the Optimization of Planar-Doped pseudomorphic HEMTs

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3 Author(s)
Sherif, K. ; Dept. Hyperfreq. et Semicond., Univ. des Sci. et Technol. de Lille, Villeneuve-d''Ascq, France ; Salmer, G. ; El-sayed, O.L.

In this work, we present the results of structural optimization of δ-doped pseudomorphic HEMTs. This study was performed using a 2D hydrodynamic energy model of high performance . The results indicate a limite for gate length reduction as well as rear plan doping. Also, we were able to show that an upper limit for the gate-edge of recess separation is to be respected.

Published in:

Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European

Date of Conference:

13-16 Sept. 1993