By Topic

Analysis and modeling of small-geometry effects on maximum cutoff frequency fT and forward transit time in high-speed self-aligned bipolar transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Rinaldi, N. ; Dept. of Electron. Eng., Univ. of Naples, Naples, Italy ; Spirito, P.

A quantitative analysis of the effects causing the maximum cutoff frequency reduction as horizontal device dimensions are downscaled is carried out. Simple analytical expressions describing the geometry dependence of the maximum cutoff frequency fT and forward transit time are derived, and verified with numerical simulations. These expressions suggest a simple method to extract the values of the maximum cutoff frequency of the internal and peripheral transistors. Moreover, the influence of significant technological parameters on maximum cutoff frequency, forward transit time and propagation delay is investigated.

Published in:

Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European

Date of Conference:

13-16 Sept. 1993