The effect of Rapid Thermal Annealing (RTA) treatment on the base and collector currents of Si/Si1-xGex HBTs is investigated. Whilst the base current is improved by high temperature annealing, probably through annealing out of point defects (reducingE/B depletion region recombination), the collector current is degraded by the out-diffusion of boron from the base, creating parasitic barriers to injection. For some devices, the E/B depletion region recombination is reduced to such an extent that the base current is dominated by neutral base recombination.
Solid State Device Research Conference, 1991. ESSDERC '91. 21st European
Date of Conference:
16-19 Sept. 1991
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