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Rapid thermal annealing of metastable and stable Si/Si1-xGex heterojunction bipolar transistors

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10 Author(s)
Shafi, Z.A. ; Dept. of Electronics & Computer Science, University of Southampton, S09 5NH, ENGLAND ; Martin, A.S.R. ; Whitehurst, J. ; Ashburn, P.
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The effect of Rapid Thermal Annealing (RTA) treatment on the base and collector currents of Si/Si1-xGex HBTs is investigated. Whilst the base current is improved by high temperature annealing, probably through annealing out of point defects (reducingE/B depletion region recombination), the collector current is degraded by the out-diffusion of boron from the base, creating parasitic barriers to injection. For some devices, the E/B depletion region recombination is reduced to such an extent that the base current is dominated by neutral base recombination.

Published in:

Solid State Device Research Conference, 1991. ESSDERC '91. 21st European

Date of Conference:

16-19 Sept. 1991

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