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The Simulation of Charge Storage in I2L Circuits

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2 Author(s)
Muller, R. ; SIEMENS AG, Research Laboratories, Munich, W.-Germany ; Ablabmeier, Ulrich

A new method for simulating charge storage effects in I2L circuits with existing CAD programs will be presented. It takes into account the different current gain dependence of saturation current and transit time. Calculated results are in very good agreement to measurements.

Published in:

Solid State Circuits Conference, 1977. ESSCIRC '77. 3rd European

Date of Conference:

20-22 Sept. 1977

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