By Topic

Development of a Dual-SPDT RF-MEMS switch for Ku-band

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Daisuke Yamane ; Institute of Industrial Science, the University of Tokyo, Meguro-ku, 153-8505 Japan ; Winston Sun ; Hiroyuki Fujita ; Hiroshi Toshiyoshi
more authors

This paper presents the design, fabrication method and measurement results on a low-loss Ohmic-contact RF-MEMS switch with a bi-lateral actuation for a Dual-SPDT switching system. The switch was fabricated based on the silicon bulk-micromachining technology and a layer-wise technique on an SOI wafer. We demonstrated a compatibility with electroplating and high aspect-ratio Deep-RIE process to have loss-less quasi-air-suspended MEMS waveguides and adequately thick gold layer for side-wall ohmic contact. Typical performance shows 0.56 dB insertion loss, 19.4 dB return loss and 51.4 dB isolation at the Ku-band frequency of 12 GHz.

Published in:

2010 IEEE Radio and Wireless Symposium (RWS)

Date of Conference:

10-14 Jan. 2010