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A CMOS bandgap reference with a 3σ inaccuracy of ±0.15% from -40°C to 125°C is presented. This level of precision is achieved by a single PTAT trim at room temperature, together with the use of chopping and higher-order curvature correction to remove non-PTAT errors. The bandgap reference draws 55 μA from a 1.8 V supply, and occupies 0.12 mm2 in 0.14 μm CMOS.
Published in:
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
Date of Conference: 7-11 Feb. 2010
- Page(s):
- 78 - 79
- ISSN :
- 0193-6530
- Print ISBN:
- 978-1-4244-6033-5
- INSPEC Accession Number:
- 11204932
- Conference Location :
- San Francisco, CA
- Digital Object Identifier :
- 10.1109/ISSCC.2010.5434040
- Product Type:
- Conference Publications
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