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A 32Gb MLC NAND-flash memory with Vth-endurance-enhancing schemes in 32nm CMOS

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24 Author(s)
Changhyuk Lee ; Hynix Semicond., Icheon, South Korea ; Sok-kyu Lee ; Sunghoon Ahn ; Jinhaeng Lee
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A 32 nm 32 Gb MLC flash memory, with MSB even page re-program, dramatically improves floating-gate (FG) coupling-induced Vth-widening while FG coupling cancellation program verify read minimizes performance loss due to additional program operation allowing throughput of 13.0 MB/S. More than 30% improvement in retention-Vth-shift and additional 50 mV reduction of cell Vth distribution is achieved by moving-read and adaptive code selection. Die size of the device is 146 mm2 in 3M 32 nm CMOS.

Published in:

Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International

Date of Conference:

7-11 Feb. 2010