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A 90nm 4Mb embedded phase-change memory with 1.2V 12ns read access time and 1MB/s write throughput

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13 Author(s)
De Sandre, G. ; STMicroelectronics, Agrate Brianza, Italy ; Bettini, L. ; Pirola, A. ; Marmonier, L.
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A 90 nm 4 Mb embedded phase-change memory (PCM) is presented, demonstrating the feasibility of PCM integration with 3 masks overhead in a 6-ML standard CMOS process. Using a low-voltage NMOS transistor as a cell selector leads to a 0.29 ??m2 cell size. A 1.2 V low-voltage read operation achieves a 12 ns access time. The 3 mm2 macro features a random write throughput of 1 MB/s and a mode to increase write throughput to 4 MB/s.

Published in:

Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International

Date of Conference:

7-11 Feb. 2010