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A thermal-diffusivity-based temperature sensor with an untrimmed inaccuracy of ±0.2°c (3s) from −55°c to 125°c

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3 Author(s)
van Vroonhoven, C.P.L. ; Delft Univ. of Technol., Delft, Netherlands ; D'Aquino, D. ; Makinwa, K.A.A.

A temperature sensor based on the thermal diffusivity of IC-grade silicon has a near-linear digital output, which is insensitive to both process spread and packaging stress. Its accuracy is mainly limited by lithographic errors and thus benefits from scaling. An implementation in a 0.18 μm CMOS process has an untrimmed inaccuracy of ±0.2°C (3σ) from -55°C to 125°C.

Published in:

Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International

Date of Conference:

7-11 Feb. 2010

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