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A 1.2V 10µW NPN-based temperature sensor in 65nm CMOS with an inaccuracy of ±0.2°C (3s) from −70°C to 125°C

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6 Author(s)
Sebastiano, F. ; NXP Semicond., Eindhoven, Netherlands ; Breems, L.J. ; Makinwa, K.A.A. ; Drago, S.
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A temperature sensor utilizing NPN transistors has been realized in a 65 nm CMOS process. It achieves a batch-calibrated inaccuracy of ±0.5°C (3σ) and a trimmed inaccuracy of ±0.2°C (3σ)from -70°C to 125°C The sensor draws 8.3 μA from a 1.2 V supply and occupies an area of 0.1 mm2.

Published in:

Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International

Date of Conference:

7-11 Feb. 2010