Referenced Items are not available for this document.
A temperature sensor utilizing NPN transistors has been realized in a 65 nm CMOS process. It achieves a batch-calibrated inaccuracy of ±0.5°C (3σ) and a trimmed inaccuracy of ±0.2°C (3σ)from -70°C to 125°C The sensor draws 8.3 μA from a 1.2 V supply and occupies an area of 0.1 mm2.
Published in:
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International
Date of Conference: 7-11 Feb. 2010
- Page(s):
- 312 - 313
- ISSN :
- 0193-6530
- Print ISBN:
- 978-1-4244-6033-5
- INSPEC Accession Number:
- 11205014
- Conference Location :
- San Francisco, CA
- Digital Object Identifier :
- 10.1109/ISSCC.2010.5433895
- Product Type:
- Conference Publications
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