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A high-gain 60GHz power amplifier with 20dBm output power in 90nm CMOS

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2 Author(s)
Law, C.Y. ; Univ. of California, Davis, CA, USA ; Pham, A.-V.

A fully integrated 60 GHz power amplifier using a standard 90 nm CMOS process is presented. The power amplifier consists of six 2-stage power amplifiers, three 2-way Wilkinson power splitters for parallel amplification, and three 2-way Wilkinson power combiners to combine the output power. The power amplifier achieves again of +20 dB, a P1dB of +18 dBm and a Psat of +20 dBm with 1.2 V supply.

Published in:

Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International

Date of Conference:

7-11 Feb. 2010