A high-gain 60GHz power amplifier with 20dBm output power in 90nm CMOS

A fully integrated 60 GHz power amplifier using a standard 90 nm CMOS process is presented. The power amplifier consists of six 2-stage power amplifiers, three 2-way Wilkinson power splitters for parallel amplification, and three 2-way Wilkinson power combiners to combine the output power. The power amplifier achieves again of +20 dB, a P
_1dB
of +18 dBm and a P
_sat
of +20 dBm with 1.2 V supply.