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SRAM stability characterization using tunable ring oscillators in 45nm CMOS

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6 Author(s)
Tsai, J. ; Univ. of California, Berkeley, CA, USA ; Seng Oon Toh ; Zheng Guo ; Liang-Teck Pang
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A method to characterize distributions of read and write margins of an SRAM array using tunable ring oscillators (ROs) is presented. A 45nm CMOS testchip demonstrates a write RO with frequency that correlates well with static wordline write-trip voltage and a read RO that that correlates well with the static-current noise margin as well as with the cell read current.

Published in:

Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International

Date of Conference:

7-11 Feb. 2010

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