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Statistical Modeling With the PSP MOSFET Model

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6 Author(s)
Li, X. ; Arizona State Univ., Tempe, AZ, USA ; Mcandrew, C.C. ; Wu, W. ; Chaudhry, S.
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PSP and the backward propagation of variance (BPV) method are used to characterize the statistical variations of metal-oxide-semiconductor field effect transistors (MOSFETs). BPV statistical modeling of NMOS and PMOS devices is, for the first time, coupled by including self-consistent modeling of ring oscillator gate delays. Parasitic capacitances are included in the analysis. The proposed technique is validated using Monte-Carlo simulations and by comparison to experimental data from two technologies.

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Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:29 ,  Issue: 4 )