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Technology road map for high frequency integrated DC-DC converter

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7 Author(s)
Qiang Li ; Center for Power Electron. Syst., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA ; Lim, M. ; Julu Sun ; Ball, A.
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This preliminary road map is provided for state-of-the-art technologies and trends toward integration of point-of-load converters. This paper encompasses an extended survey of literature ranging from device technologies and magnetic materials to integration technologies and approaches. The paper is organized into three main sections. 1) Device technologies, including the trench MOSFET, lateral MOSFET and lateral trench MOSFET, are discussed along with their intended applications. The critical role of device packaging to high-frequency integration is assessed. 2) Magnetic materials: In recent years, a number of new magnetic materials have been explored in various research labs to facilitate magnetic integration for high-frequency POL applications. These data are collected and organized to help selecting magnetic material for various current levels and frequency ranges. 3) Levels of integration, which are defined with the focus on magnetic integration techniques and approaches, namely board-level, package-level and wafer-level, each with suitable current scale and frequency range.

Published in:

Applied Power Electronics Conference and Exposition (APEC), 2010 Twenty-Fifth Annual IEEE

Date of Conference:

21-25 Feb. 2010