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Temperature Dependent Study of Random Telegraph Noise in Gate-All-Around PMOS Silicon Nanowire Field-Effect Transistors

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13 Author(s)
Hong, B.H. ; Sch. of Electr. Eng., Korea Univ., Seoul, South Korea ; Choi, L. ; Jung, Y.C. ; Hwang, S.W.
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We report the random telegraph noise observed in gate-all-around (GAA) PMOS silicon nanowire FETs (SNWFETs) with the radius of 5 nm, at various temperatures (s) down to 4.2 K. From the -dependence of the capture/emission time, we obtain the energy and the charging status of the trap states. The gate bias dependence and the -dependence of the scattering coefficient-mobility product extracted from the relative fluctuation amplitude of the drain current are consistent with the fact that the surface roughness scattering is dominant in GAA PMOS SNWFETs.

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Nanotechnology, IEEE Transactions on  (Volume:9 ,  Issue: 6 )