By Topic

300-mm Production-Worthy Magnetically Enhanced Non-Bosch Through-Si-Via Etch for 3-D Logic Integration

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Teh, W.H. ; Intel at SEMATECH, Albany, NY, USA ; Caramto, R. ; Chidambaram, T. ; Wang, Wei
more authors

We report a process development route toward 300-mm production-worthy non-Bosch through-silicon-via (TSV) etch with critical dimensions between 1-5 ??m and aspect ratios up to 20:1 for 3-D logic applications. The etch development was performed on an experimental alpha-tool: a magnetically enhanced capacitively coupled plasma etcher with a dipole ring magnet that aims to capture the strengths (anisotropicity, profile uniformity) while eliminating the weaknesses (scalloping, undercut, residues) of a nominal Bosch process. Key factors contributing to the control of sidewall taper and roughness, etched TSV volume and depth, mask undercut, local bowing effects, and within wafer (WIW) center-to-edge depth and profile uniformity were evaluated. TSVs with nominal sizes of 5 ?? 25 ??m, 5 ?? 40 ??m and 1 ?? 20 ??m with less than 1% WIW nonuniformity, negligible silicon scalloping/mask undercut, and good profile anisotropicity were developed. Up to 3 ?? 20 ??m and 5 ?? 25 ??m void-free Cu-filled TSVs were demonstrated with both vertical TSVs and tapered TSVs.

Published in:

Semiconductor Manufacturing, IEEE Transactions on  (Volume:23 ,  Issue: 2 )