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Thermal Noise in MOSFETs: A Two- or a Three-Parameter Noise Model?

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6 Author(s)
Emam, M. ; Microwave Lab., Univ. Catholique de Louvain, Louvain-La-Neuve, Belgium ; Sakalas, P. ; Vanhoenacker-Janvier, D. ; Raskin, J.-P.
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In this brief, it is clearly demonstrated that a two-parameter noise model is sufficient to accurately extract the MOSFET high-frequency noise performance, as long as channel uniformity is ensured (which corresponds to mainstream CMOS technology). Nevertheless, in the case of asymmetric channel-based MOSFETs, it is shown that a three-parameter noise model is required.

Published in:

Electron Devices, IEEE Transactions on  (Volume:57 ,  Issue: 5 )