Referenced Items are not available for this document.
In this brief, it is clearly demonstrated that a two-parameter noise model is sufficient to accurately extract the MOSFET high-frequency noise performance, as long as channel uniformity is ensured (which corresponds to mainstream CMOS technology). Nevertheless, in the case of asymmetric channel-based MOSFETs, it is shown that a three-parameter noise model is required.
Published in:
Electron Devices, IEEE Transactions on
(Volume:57
,
Issue:
5
)
Date of Publication: May 2010
- Page(s):
- 1188 - 1191
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 11256608
- Digital Object Identifier :
- 10.1109/TED.2010.2044286
- Product Type:
- Journals & Magazines
- Date of Publication :
- 18 March 2010
- Date of Current Version :
- 19 April 2010
- Issue Date :
- May 2010
- Sponsored by :
- IEEE Electron Devices Society
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