Referenced Items are not available for this document.
We investigated the state stability of the low-resistance state (LRS) in a resistive switching memory having a Pt/Cu:MoOx/GdOx/Pt structure. Various resistance values of LRS were accurately controlled using an external load resistor connected in series with the resistive memory device. We found that the retention time decreased with an increase in the resistance of LRS. We performed accelerating tests for resistance transition from a low- to a high-resistance state under temperatures ranging from 200??C to 250??C. A predicted resistance of LRS for a ten-year retention period at 85??C was determined based on the Arrhenius law.
Published in:
Electron Device Letters, IEEE
(Volume:31
,
Issue:
5
)
Date of Publication: May 2010
- Page(s):
- 485 - 487
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 11260336
- Digital Object Identifier :
- 10.1109/LED.2010.2042677
- Product Type:
- Journals & Magazines
- Date of Publication :
- 18 March 2010
- Date of Current Version :
- 22 April 2010
- Issue Date :
- May 2010
- Sponsored by :
- IEEE Electron Devices Society
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