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Investigation of State Stability of Low-Resistance State in Resistive Memory

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8 Author(s)
Jubong Park ; Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju , Korea ; Minseok Jo ; El Mostafa Bourim ; Jaesik Yoon
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We investigated the state stability of the low-resistance state (LRS) in a resistive switching memory having a Pt/Cu:MoOx/GdOx/Pt structure. Various resistance values of LRS were accurately controlled using an external load resistor connected in series with the resistive memory device. We found that the retention time decreased with an increase in the resistance of LRS. We performed accelerating tests for resistance transition from a low- to a high-resistance state under temperatures ranging from 200??C to 250??C. A predicted resistance of LRS for a ten-year retention period at 85??C was determined based on the Arrhenius law.

Published in:

IEEE Electron Device Letters  (Volume:31 ,  Issue: 5 )