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1.3- \mu m Mode-Locked Disk Laser With Wafer Fused Gain and SESAM Structures

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9 Author(s)
Rautiainen, J. ; Optoelectron. Res. Centre, Tampere Univ. of Technol., Tampere, Finland ; Lyytikainen, J. ; Toikkanen, L. ; Nikkinen, J.
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We report 1.3-μm mode-locked optically pumped semiconductor disk laser (SDL) made by wafer fusion. The gain medium and the saturable absorber, both based on an InP material system, were integrated with AlGaAs-GaAs distributed Bragg reflectors by localized wafer fusion. An intracavity wedged diamond heat spreader capillary bonded to the gain chip prevents the disruption of 6.4-ps pulse spectrum and supports 100 mW of average power. The results reveal an advantage of wafer fusion process of disparate materials over monolithically grown InP-based gain/absorber structures and demonstrate practical potential of the technique for long-wavelength SDLs.

Published in:

Photonics Technology Letters, IEEE  (Volume:22 ,  Issue: 11 )

Date of Publication:

June1, 2010

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