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High-performance CF4 plasma treated polycrystalline silicon thin-film transistors using a high-k Tb2O3 gate dielectric

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2 Author(s)
Tung-Ming Pan ; Department of Electronics Engineering, Chang Gung University, Taoyuan 333, Taiwan ; Zhi-Hong Li

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3357428 

In this letter, we have developed a high-k Tb2O3 gate dielectric polycrystalline silicon (poly-Si) thin-film transistors (TFTs) prepared under a CF4 plasma treatment. A high-performance TFT device that has a low threshold voltage of 0.89 V, a high effective carrier mobility of 59.6 cm2/Vs, a small subthreshold swing of 212 mV/dec, and a high ION/IOFF current ratio of 8.15×106 can be achieved. This phenomenon is attributed to fluorine atoms into poly-Si films can effectively passivate the trap states near the Tb2O3/poly-Si interface. The fluorine incorporation also enhanced electrical reliability of the Tb2O3 poly-Si TFT. All of these results suggest that the CF4 plasma-treated poly-Si Tb2O3 TFT is a good candidate for high-performance TFTs.

Published in:

Applied Physics Letters  (Volume:96 ,  Issue: 11 )

Date of Publication:

Mar 2010

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