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Compact Modeling of Variation in FinFET SRAM Cells

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4 Author(s)
Lu, D.D. ; Univ. of California, Berkeley, CA, USA ; Chung-Hsun Lin ; Niknejad, A.M. ; Chenming Hu

FinFET technology is a possible solution to achieve a better power/performance trade-off for SRAM cells. This article provides a comprehensive analysis of the variations in FinFET devices, their impact on SRAM stability, and a statistical design procedure for FinFET SRAM cells.

Published in:

Design & Test of Computers, IEEE  (Volume:27 ,  Issue: 2 )