By Topic

Layout Proximity Effects and Modeling Alternatives for IC Designs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Xi-Wei Lin ; Silicon Eng. Group, Synopsys, Mountain View, CA, USA ; Moroz, V.

Layout-dependent variations significantly affect device modeling, model extraction, and design solutions. A novel approach is proposed in this article to seamlessly integrate physical models of lithography, strained Si, and ion implantation processes, with layout geometry for efficient model generation.

Published in:

Design & Test of Computers, IEEE  (Volume:27 ,  Issue: 2 )