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Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates

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11 Author(s)
Leach, J.H. ; Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284, USA ; Wu, M. ; Ni, X. ; Li, X.
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We report microwave characteristics of field effect transistors employing InAlN/AlN/GaN heterostructures grown on low-defect-density bulk Fe-doped GaN substrates. We achieved unity current gain cutoff frequencies of 14.3 and 23.7 GHz for devices with gate lengths of 1 and 0.65 μm, respectively. Measurements as a function of applied bias allow us to estimate the average carrier velocity in the channel to be ∼1.0×107 cm/sec for a 1 μm device. Additionally, we found nearly no gate lag in the devices, which is considered a precondition for good performance under large signal operation.

Published in:

Applied Physics Letters  (Volume:96 ,  Issue: 10 )

Date of Publication:

Mar 2010

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