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Nondegeneracy Conditions for Active Memristive Circuits

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1 Author(s)
Ricardo Riaza ; Departamento de Matemática Aplicada a las Tecnologíacute;as de la Información, ETSI Telecomunicación , Universidad Politécnica de Madrid, Madrid, Spain

This brief presents a characterization of nondegenerate circuits with active memristors, i.e., memristors with a negative memductance at certain operating ranges. The analysis proceeds by characterizing index-one configurations in several differential-algebraic models of active memristive circuits. We apply tree-based techniques to the analysis of nodal analysis models and then extend this approach to branch-oriented systems. Some examples illustrate the scope of our results.

Published in:

IEEE Transactions on Circuits and Systems II: Express Briefs  (Volume:57 ,  Issue: 3 )