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Temperature Instability of Resistive Switching on  \hbox {HfO}_{x} -Based RRAM Devices

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7 Author(s)
Fang, Z. ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore ; Yu, H.Y. ; Liu, W.J. ; Wang, Z.R.
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In this letter, the temperature instability of HfOx -based resistive switching memory is investigated. It is observed that with the increase of high temperature (up to 100 ??C in this work), the leakage current of high-resistance state would increase, and the set/reset voltages would decrease. In addition, multibit switching exhibited at room temperature might not be retained with the increase of temperature. All these phenomena can be correlated with oxygen-vacancy-related trap formation and annihilation.

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Electron Device Letters, IEEE  (Volume:31 ,  Issue: 5 )