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In this letter, the temperature instability of HfOx -based resistive switching memory is investigated. It is observed that with the increase of high temperature (up to 100 ??C in this work), the leakage current of high-resistance state would increase, and the set/reset voltages would decrease. In addition, multibit switching exhibited at room temperature might not be retained with the increase of temperature. All these phenomena can be correlated with oxygen-vacancy-related trap formation and annihilation.