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Internal Bias Field in Ferroelectric Polymer Thin Film for Nonvolatile Memory Applications

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7 Author(s)
Woo Young Kim ; Div. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea ; Du Youn Ka ; Dong Soo Kim ; Il Woong Kwon
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Coercive voltages (V C, the voltage which makes remanent polarization zero in ferroelectrics) of metal-ferroelectric polymer-metal capacitors were measured with different pulse periods. From the measured V C, coercive fields (E C, normalized V C for thickness) and internal bias fields (E BIAS) were calculated. Although E C was found to be nearly constant with thickness, E BIAS increased as thickness decreased. Based on these findings, it appears that E BIAS can be induced from interface phenomenon and greatly affects retention performance in thin ferroelectric films used for nonvolatile memory devices.

Published in:

Electron Device Letters, IEEE  (Volume:31 ,  Issue: 5 )