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Type-I GaSb-Based Laser Diodes Operating in 3.1- to 3.3- \mu m Wavelength Range

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5 Author(s)
Hosoda, T. ; Dept. of Electr. & Comput. Eng., State Univ. of New York at Stony Brook, Stony Brook, NY, USA ; Kipshidze, G. ; Tsvid, G. ; Shterengas, L.
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Type-I quantum-well (QW) diode lasers based on AlInGaAsSb-InGaAsSb-AlInGaAsSb heterostructure active region with narrow waveguide and high indium content in the barrier were fabricated. Room-temperature continuous-wave output power of 190, 165, and 50 mW for devices emitting 3.1, 3.2, and 3.3 μm correspondingly were demonstrated. Experiment shows that improvement of the hole confinement in QWs by use of 32% indium in AlGaInAsSb barrier is a promising way of further enhancement of the device performance.

Published in:

Photonics Technology Letters, IEEE  (Volume:22 ,  Issue: 10 )