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ZnO-GaN Hybrid Heterostructures as Potential Cost-Efficient LED Technology

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6 Author(s)
Bakin, A. ; Inst. of Semicond. Technol., Tech. Univ. Braunschweig, Braunschweig, Germany ; Behrends, A. ; Waag, A. ; Lugauer, H.
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Reliable and reproducible p-type doping is the main challenge for fabricating highly efficient ZnO-based light-emitting diodes. During the last few years, the lack of reliable p-type conductivity in ZnO has initiated research concerning the combination of ZnO and other semiconductors, which can then be doped p-type. One of these concepts is the combination of ZnO with GaN heterostructures aiming at the fabrication of hybrid LEDs. We discuss the problems as well as potential benefits from a combination of ZnO and GaN hybrid heterostructures in a single device. We also present our recent results on ZnO-GaN hybrid LEDs using an inverted LED concept. The hybrid LEDs have an external quantum efficiency of more than 35%.

Published in:

Proceedings of the IEEE  (Volume:98 ,  Issue: 7 )

Date of Publication:

July 2010

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