Referenced Items are not available for this document.
Recent surface potential models for fully depleted short-channel SOI MOSFET's are compared. The parabolic potential approach is clarified to be a special case of the quasi-2-D approach. An extended quasi-2-D model is also derived
Published in:
Electron Devices, IEEE Transactions on
(Volume:43
,
Issue:
11
)
Date of Publication: Nov 1996
- Page(s):
- 2034 - 2037
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 5433448
- Digital Object Identifier :
- 10.1109/16.543048
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Nov 1996
- Sponsored by :
- IEEE Electron Devices Society
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