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A metal-ferroelectric PbTiO3-semiconductor switch diode (MFSS) for room-temperature high-speed infrared sensing application

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4 Author(s)
Chen, F.Y. ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Fang, Y.K. ; Shu, C.Y. ; Chen, Jiann‐Ruey

A thin PbTiO3-n-p+ silicon diode (MFSS) has been developed, in which the switching voltage changes in proportion to the infrared light power. The infrared-sensitive parts consist of PbTiO 3 ferroelectric thin films deposited by RF sputtering. A fast response with a rise time of 0.647 μs has been attained, which is fairly fast compared with the other types of thermal infrared sensors. Additionally, there is a wide voltage variation of 9 V for sensing the infrared light from off-state-voltage of 11 V to on-state-voltage of 2 V in the device. In this paper, the current-voltage curves, the effect of infrared light power on switching voltage, and the effects of PbTiO3 thickness on switching voltage as well as sensitivity to infrared light are reported in detail

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Electron Devices, IEEE Transactions on  (Volume:43 ,  Issue: 11 )