By Topic

Thermal noise modeling for short-channel MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Triantis, D.P. ; Dept. of Electr. Eng., Patras Univ., Greece ; Birbas, A.N. ; Kondis, D.

An analytical formulation of the thermal noise in short-channel MOSFETs, working in the saturation region, is presented. For the noise calculation, we took into account effects like the field dependent noise temperature and mobility, the device geometry and the channel length modulation, the back gate effect and the velocity saturation. The derived data from the model are in good agreement with reported thermal noise measurements, regarding the noise bias dependence, for transistors with channel lengths shorter than 1 μm. Since the present thermal noise models of MOS transistors are valid for channel lengths well above 1 μm, the proposed model can be easily incorporated in circuit simulators like SPICE, providing an extension to the analytical thermal noise modeling suitable for submicron MOSFETs

Published in:

Electron Devices, IEEE Transactions on  (Volume:43 ,  Issue: 11 )