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Thermal noise modeling for short-channel MOSFETs

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3 Author(s)
Triantis, D.P. ; Dept. of Electr. Eng., Patras Univ., Greece ; Birbas, A.N. ; Kondis, D.

An analytical formulation of the thermal noise in short-channel MOSFETs, working in the saturation region, is presented. For the noise calculation, we took into account effects like the field dependent noise temperature and mobility, the device geometry and the channel length modulation, the back gate effect and the velocity saturation. The derived data from the model are in good agreement with reported thermal noise measurements, regarding the noise bias dependence, for transistors with channel lengths shorter than 1 μm. Since the present thermal noise models of MOS transistors are valid for channel lengths well above 1 μm, the proposed model can be easily incorporated in circuit simulators like SPICE, providing an extension to the analytical thermal noise modeling suitable for submicron MOSFETs

Published in:

Electron Devices, IEEE Transactions on  (Volume:43 ,  Issue: 11 )

Date of Publication:

Nov 1996

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