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The fabrication and characterization of EEPROM arrays on glass using a low-temperature poly-Si TFT process

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5 Author(s)
Young, N.D. ; Philips Res. Lab., Redhill, UK ; Harkin, G. ; Bunn, R.M. ; McCulloch, D J
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The fabrication and optimization of poly-Si thin-film transistors and memory devices on glass substrates at temperatures of 200°C-400°C is described, and the device characteristics and stability are discussed. The devices were formed using PECVD amorphous silicon, silicon dioxide, and silicon nitride films, and the crystallization of the amorphous silicon was achieved with an excimer laser. The performance of 16×16 EEPROM arrays with integrated drive circuits formed using this technology is presented

Published in:

Electron Devices, IEEE Transactions on  (Volume:43 ,  Issue: 11 )

Date of Publication:

Nov 1996

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