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A hot hole-induced low-level leakage current in thin silicon dioxide films

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4 Author(s)
Matsukawa, Naohiro ; Semiconductor Quality Assurance Dept., Toshiba Corp., Kawasaki, Japan ; Yamada, S. ; Amemiya, K. ; Hazama, H.

A new kind of stress-induced low-level leakage current (LLLC) in thin silicon dioxide is reported. It is observed after the stress of hot hole injection at the gate edge. Since voltage dependence of this new kind of LLLC is steeper than that of conventional FN stress-induced LLLC, each conduction mechanism may be different. This LLLC is reduced by both hot electron injection and UV irradiation. These reductions are never observed in FN stress-induced LLLC. The most promising mechanism is sequential tunneling via trapped holes

Published in:

Electron Devices, IEEE Transactions on  (Volume:43 ,  Issue: 11 )

Date of Publication:

Nov 1996

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