By Topic

Infrared focal plane array incorporating silicon IC process compatible bolometer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

13 Author(s)
A. Tanaka ; Microelectron. Res. Labs., NEC Corp., Kanagawa, Japan ; S. Matsumoto ; N. Tsukamoto ; S. Itoh
more authors

A 128×128 element bolometer infrared image sensor using thin film titanium is proposed. The device is a monolithically integrated structure with a titanium bolometer detector located over a CMOS circuit that reads out the bolometer's signals. By employing a metallic material like titanium and refining the CMOS readout circuit, it is possible to minimize 1/f noise. It is demonstrated that the use of low 1/f noise material will help increase bias current and improve the S/N ratio. Since the fabrication process is silicon-process compatible, costs can be kept low

Published in:

IEEE Transactions on Electron Devices  (Volume:43 ,  Issue: 11 )