Referenced Items are not available for this document.
A 128×128 element bolometer infrared image sensor using thin film titanium is proposed. The device is a monolithically integrated structure with a titanium bolometer detector located over a CMOS circuit that reads out the bolometer's signals. By employing a metallic material like titanium and refining the CMOS readout circuit, it is possible to minimize 1/f noise. It is demonstrated that the use of low 1/f noise material will help increase bias current and improve the S/N ratio. Since the fabrication process is silicon-process compatible, costs can be kept low
Published in:
Electron Devices, IEEE Transactions on
(Volume:43
,
Issue:
11
)
Date of Publication: Nov 1996
- Page(s):
- 1844 - 1850
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 5433417
- Digital Object Identifier :
- 10.1109/16.543017
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Nov 1996
- Sponsored by :
- IEEE Electron Devices Society
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