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InP/InGaAs double-heterojunction bipolar transistors for high-speed optical receivers

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4 Author(s)
Sano, E. ; NTT LSI Labs., Atsugi, Japan ; Yoneyama, M. ; Yamahata, Shoji ; Matsuoka, Yutaka

We fabricated monolithically integrated pin/HBT photoreceivers using FPIGA (full-potential InGaAs) DHBT's with various collector thicknesses. An HBT figure-of-merit was deduced from the relationship between measured bandwidths of the preamplifiers and the fT's and fmax's of the DHBT's. A phenomenological device model of the DHBT's is proposed to find the optimum collector thickness that gives the highest bandwidth of the photoreceivers. Finally, we discuss the feasibility of monolithically integrating a pin-PD, preamplifier, buffer amplifier, and D-type flip-flop with an operating speed of 40 Gbit/s

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Electron Devices, IEEE Transactions on  (Volume:43 ,  Issue: 11 )