Referenced Items are not available for this document.
We fabricated monolithically integrated pin/HBT photoreceivers using FPIGA (full-potential InGaAs) DHBT's with various collector thicknesses. An HBT figure-of-merit was deduced from the relationship between measured bandwidths of the preamplifiers and the fT's and fmax's of the DHBT's. A phenomenological device model of the DHBT's is proposed to find the optimum collector thickness that gives the highest bandwidth of the photoreceivers. Finally, we discuss the feasibility of monolithically integrating a pin-PD, preamplifier, buffer amplifier, and D-type flip-flop with an operating speed of 40 Gbit/s
Published in:
Electron Devices, IEEE Transactions on
(Volume:43
,
Issue:
11
)
Date of Publication: Nov 1996
- Page(s):
- 1826 - 1832
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 5433414
- Digital Object Identifier :
- 10.1109/16.543014
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Nov 1996
- Sponsored by :
- IEEE Electron Devices Society
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