Cart (Loading....) | Create Account
Close category search window

Electronic properties of filtered cathodic vacuum arc (FCVA) deposited silicon thin films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Bilek, M.M.M. ; Dept. of Eng., Cambridge Univ. ; Milne, W.I.

The electronic properties of silicon films deposited in a filtered cathodic vacuum arc (FCVA) from a highly doped silicon target have been studied by the authors, and correlated with growth conditions. Films with the best electrical properties were deposited with elevated growth surface temperatures (200-300°C) and low background pressures (~10 4 torr) of hydrogen. The number of times that the cathodic arc had to be retriggered during the deposition of a film also significantly affected its electronic properties. Room temperature photo-conductivities ~10-6 (Ω.cm)-1 have been measured at AMI illumination. This is the first time photo-conductivity has been observed in FCVA deposited silicon

Published in:

Electronics Letters  (Volume:32 ,  Issue: 21 )

Date of Publication:

10 Oct 1996

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.