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Electronic properties of filtered cathodic vacuum arc (FCVA) deposited silicon thin films

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2 Author(s)
Bilek, M.M.M. ; Dept. of Eng., Cambridge Univ. ; Milne, W.I.

The electronic properties of silicon films deposited in a filtered cathodic vacuum arc (FCVA) from a highly doped silicon target have been studied by the authors, and correlated with growth conditions. Films with the best electrical properties were deposited with elevated growth surface temperatures (200-300°C) and low background pressures (~10 4 torr) of hydrogen. The number of times that the cathodic arc had to be retriggered during the deposition of a film also significantly affected its electronic properties. Room temperature photo-conductivities ~10-6 (Ω.cm)-1 have been measured at AMI illumination. This is the first time photo-conductivity has been observed in FCVA deposited silicon

Published in:

Electronics Letters  (Volume:32 ,  Issue: 21 )

Date of Publication:

10 Oct 1996

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